![]() ![]() V CE: P CE = V CE * I C = 0.2 * 8.6 = 1.72 mW Input File Listing Model Parameters dc Node Voltages Voltage Source Currents Total Power Dissipation Operating Point Information (.op statement) Job. BJT functionality and how to estimate BJT power dissipation, as well as. Unlike an ideal switch, an actual switch, such as a bipolar junction transistor, has two major sources of power loss: conduction loss and switching loss. Let the power dissipation of R 1 and R 2 be P R1 and P R2 respectively and the collector-emitter and base-emitter power dissipation of the transistor be P CE and P be respectively. applications using a bipolar junction transistor (BJT) as the main switch (QA). Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power. Then, I B, I R2, I b, and I C are calculated as follows: Power dissipation: When a transistor conducts current between collector and emitter, it also drops voltage between those two points. The presence of a BJT in a circuit is described to Spice through the Spice input file using an element statement beginning with the letter Q. ![]() Suppose that the BRT is the RN1402 (R 1=R 2=10 kΩ), the input voltage (V I) is 10 V, the collector-emitter voltage (V CE) is 0.2 V, the base-emitter voltage (V be) is 0.7 V, and the operating current gain (h FE) of the internal transistor is 10. Here, let’s calculate the power dissipated by the BRT shown in Figure 1 when it is in the “on” state. The power dissipation of a BRT is the sum of the power dissipated by the internal transistor (Q) and the built-in bias resistors (R 1 and R 2). ![]()
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